? irfp3006pbf 1 www.irf.com ? 2013 international rectifier september 06, 2013 applications ? high efficiency synchronous rectification in smps ? uninterruptible power supply ? high speed power switching ? hard switched and high frequency circuits benefits ? improved gate, avalanche and dynamic dv/dt ruggedness ? fully characterized capacitance and avalanche soa ? enhanced body diode dv/dt and di/dt capability ? lead-free gate drain source g d s v dss 60v r ds(on) typ. 2.1m ? max. 2.5m ? i d (silicon limited) 270a ? i d (package limited) 195a base part number package type standard pack orderable part number ?? form quantity ? irfp3006pbf to-247 tube 25 irfp3006pbf absolute maximum ratings ??? symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 270 ? a i d @ t c = 100c continuous drain current, v gs @ 10v(silicon limited) 190 ? i dm pulsed drain current ? 1080 p d @t c = 25c maximum power dissipation 375 w linear derating factor 2.5 w/c v gs gate-to-source voltage 20 v t j operating junction and -55 to + 175 c t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6-32 or m3 screw 10lbf ? in (1.1n ? m) avalanche characteristics ??? e as (thermally limited) single pulse avalanche energy ? 320 mj i ar avalanche current ? see fig. 14, 15, 22a, 22b a e ar repetitive avalanche energy ? mj thermal resistance ??? symbol parameter typ. max. units r ? jc junction-to-case ? ??? 0.4 r ? cs case-to-sink, flat greased surface 0.24 ??? c/w r ? ja junction-to-ambient ??? 40 ? ? i d @ t c = 25c continuous drain current, v gs @ 10v (wire bond limited) 195 ? dv/dt peak diode recovery ? 10 v/ns ? to-247ac g d s d s g ?
? irfp3006pbf 2 www.irf.com ? 2013 international rectifier september 06, 2013 static @ t j = 25c (unless otherwise specified) ? ??? symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.07 ??? v/c reference to 25c, i d = 5ma ? r ds(on) static drain-to-source on-resistance ??? 2.1 2.5 m ? v gs = 10v, i d = 170a ? v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a i dss drain-to-source leakage current ??? ??? 20 a v ds = 60v, v gs = 0v ??? ??? 250 v ds = 60v, v gs = 0v, t j = 125c i gss gate-to-source forward l eakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g internal gate resistance ??? 2.0 ??? ?? dynamic @ t j = 25c (unless otherwise specified) ? ??? symbol parameter min. typ. max. units conditions gfs forward transconductance 280 ??? ??? s v ds = 25v, i d = 170a q g total gate charge ??? 200 300 nc i d = 170a q gs gate-to-source charge ??? 37 ??? v ds =30v q gd gate-to-drain ("miller" ) charge ??? 60 ??? v gs = 10v ? q sync total gate charge sync. (q g - q gd ) ??? 140 ??? i d = 170a, v ds =0v, v gs = 10v t d(on) turn-on delay time ??? 16 ??? ns v dd = 39v t r rise time ??? 182 ??? i d = 170a t d(off) turn-off delay time ??? 118 ??? r g = 2.7 ? t f fall time ??? 189 ??? v gs = 10v ? c iss input capacitance ??? 8970 ??? pf v gs = 0v c oss output capacitance ??? 1020 ??? v ds = 50v c rss reverse transfer capacitance ??? 534 ??? ? = 1.0 mhz, see fig. 5 c oss eff. (er) effective output capacitance (energy related) ??? 1480 ??? v gs = 0v, v ds = 0v to 48v ?? see fig. 11 c oss eff. (tr) effective output capacitance (time related) ??? 1920 ??? v gs = 0v, v ds = 0v to 48v ? diode characteristics ? ??? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 257 ? a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 1028 integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 170a, v gs = 0v ? t rr reverse recovery time ??? 44 ??? ns t j = 25c ??? 48 ??? t j = 125c q rr reverse recovery charge ??? 63 ??? nc t j = 25c ??? 77 ??? t j = 125c i rrm reverse recovery current ??? 2.4 ??? a t j = 25c notes: ? calculated continuous current based on maximum allowable juncti on temperature. bond wire curre nt limit is 195a.note that current limitations arising from heat ing of the device leads may occur with some lead mounting arrangements. (refer to an- 1140) ? ? repetitive rating; pulse width lim ited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 0.022mh, r g = 50 ? , i as = 170a,v gs =10v. part not recommended for use above this value. ? isd 170a, di/dt 1360a/s, v dd v (br)dss , t j 175c. ? pulse width 400s; duty cycle 2%. ? coss eff. (tr) is a fixed capacitance that gives the same charging time as coss while v ds is rising from 0 to 80% v dss . ? coss eff. (er) is a fixed capacitance that gives the same energy as coss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. * all spec data and curves based on (to-220 pak -irfb3006pbf) datasheet. d s g v r = 51v, i f = 170a di/dt = 100a/s ?
? irfp3006pbf 3 www.irf.com ? 2013 international rectifier september 06, 2013 fig 2. typical output characteristics fig 3. typical transfer characteristics fig 1. typical output characteristics fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 170a v gs = 10v fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 25c 3.5v vgs top 15v 10v 8.0v 6.0v 5.0v 4.5v 4.0v bottom 3.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 175c 3.5v vgs top 15v 10v 8.0v 6.0v 5.0v 4.5v 4.0v bottom 3.5v 2.0 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ? ? ) v ds = 25v ? 60s pulse width t j = 25c t j = 175c 1 10 100 v ds , drain-to-source voltage (v) 0 4000 8000 12000 16000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 40 80 120 160 200 240 280 q g total gate charge (nc) 0 4 8 12 16 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v i d = 170a
? irfp3006pbf 4 www.irf.com ? 2013 international rectifier september 06, 2013 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 55 60 65 70 75 80 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e i d = 5ma fig 8. maximum safe operating area fig 9. maximum drain current vs. case temperature fig 10. drain-to-source breakdown voltage fig 12. maximum avalanche energy vs. drain current fig 11. typical coss stored energy 25 50 75 100 125 150 175 t c , case temperature (c) 0 50 100 150 200 250 300 i d , d r a i n c u r r e n t ( a ) limited by package 0.0 0.4 0.8 1.2 1.6 2.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc limited by package 0 10 20 30 40 50 60 v ds, drain-to-source voltage (v) 0.0 0.5 1.0 1.5 2.0 e n e r g y ( j ) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 1400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 20a 27a bottom 170a fig 7. typical source-to-drain diode forward voltage
? irfp3006pbf 5 www.irf.com ? 2013 international rectifier september 06, 2013 notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of tjmax. this is validated for every part type. 2. safe operation in avalanche is allowed as long as tjmax is not exceeded. 3. equation below based on circui t and waveforms shown in figures 16a, 16b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction te mperature, not to exceed tjmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 170a fig 15. maximum avalanche energy vs. temperature fig 14. typical avalanche current vs. pulsewidth 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) fig 13. maximum effective transient thermal impedance, junction-to-case
? irfp3006pbf 6 www.irf.com ? 2013 international rectifier september 06, 2013 fig. 17 typical recovery current vs. di f /dt fig 18. typical recovery current vs. di f /dt fig 19. typical stored charge vs. di f /dt fig. 16 threshold voltage vs. temperature fig 20. typical stored charge vs. di f /dt -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a i d = 1.0ma i d = 250a 100 200 300 400 500 600 700 800 di f / dt - (a / s) 0 4 8 12 16 20 i r r m - ( a ) i f = 112a v r = 51v t j = 125c t j = 25c 100 200 300 400 500 600 700 800 di f / dt - (a / s) 0 4 8 12 16 20 i r r m - ( a ) i f = 170a v r = 51v t j = 125c t j = 25c 100 200 300 400 500 600 700 800 di f / dt - (a / s) 0 100 200 300 400 500 600 700 q r r - ( n c ) i f = 112a v r = 51v t j = 125c t j = 25c 100 200 300 400 500 600 700 800 di f / dt - (a / s) 0 100 200 300 400 500 600 700 q r r - ( n c ) i f = 170a v r = 51v t j = 125c t j = 25c
? irfp3006pbf 7 www.irf.com ? 2013 international rectifier september 06, 2013 fig 21. peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets fig 22b. unclamped inductive waveforms fig 22a. unclamped inductive test circuit fig 23a. switching time test circuit fig 23b. switching time waveforms fig 24a. gate charge test circuit fig 24b. gate charge waveform
? irfp3006pbf 8 www.irf.com ? 2013 international rectifier september 06, 2013 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ac package is not recommended for surface mount application. to-247ac part marking information to-247ac package outline (dimensions are shown in millimeters (inches))
? irfp3006pbf 9 www.irf.com ? 2013 international rectifier september 06, 2013 ir world headquarters: 101n sepulveda blvd, el segundo, california 90245, usa to ? contact ? interna onal ? rec er, ? please ? visit ? h p://www.irf.com/whoto \ call/ qualification information ? qualification level industrial (per jedec jesd47f ) ?? moisture sensitivity level to-247ac n/a rohs compliant yes ? ? ? qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability ?? applicable version of jedec standar d at the time of product release.
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